2SA1962-O(Q)
| Parameters | |
|---|---|
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 3 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -230V |
| Max Power Dissipation | 130W |
| Current Rating | -15A |
| Frequency | 30MHz |
| Base Part Number | 2SA1962 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 130W |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 30MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 230V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A 5V |
| Current - Collector Cutoff (Max) | 5μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Collector Emitter Breakdown Voltage | 230V |
| Transition Frequency | 30MHz |
| Collector Emitter Saturation Voltage | -1.5V |
| Collector Base Voltage (VCBO) | 230V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 55 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet