2N5680
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Packaging | Bulk |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | LOW LEAKAGE |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | 2N5680 |
| JESD-30 Code | O-MBCY-W3 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 200°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 1W |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 250mA 2V |
| Current - Collector Cutoff (Max) | 10μA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Current - Collector (Ic) (Max) | 1A |
| Transition Frequency | 30MHz |
| Power Dissipation-Max (Abs) | 1W |
| VCEsat-Max | 1 V |
| Power Dissipation Ambient-Max | 10W |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet