2N5639
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Bulk |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | MATTE TIN |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-W3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 310mW |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 12V VGS |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 60Ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 4 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) | 25mA @ 20V |
| Voltage - Breakdown (V(BR)GSS) | 35V |
| Resistance - RDS(On) | 60Ohm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet