2N5179 PBFREE
| Parameters | |
|---|---|
| Factory Lead Time | 24 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | O-MBCY-W4 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 200mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 3mA 1V |
| Gain | 15dB |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Current - Collector (Ic) (Max) | 50mA |
| Transition Frequency | 900MHz |
| Frequency - Transition | 2GHz |
| Power Dissipation-Max (Abs) | 0.3W |
| VCEsat-Max | 0.4 V |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B |
| Collector-Base Capacitance-Max | 1pF |
| Noise Figure (dB Typ @ f) | 4.5dB @ 200MHz |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet