2N4416A-2
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Transistor Element Material | SILICON |
| Operating Temperature | -50°C~150°C TJ |
| Packaging | Bulk |
| Published | 2009 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Terminal Finish | TIN LEAD |
| HTS Code | 8541.21.00.95 |
| Max Power Dissipation | 300mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | O-MBCY-W4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | DEPLETION MODE |
| FET Type | N-Channel |
| Transistor Application | AMPLIFIER |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 15V |
| FET Technology | JUNCTION |
| Feedback Cap-Max (Crss) | 0.8 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id | 2.5V @ 1nA |
| Voltage - Breakdown (V(BR)GSS) | 35V |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet