 
    | Parameters | |
|---|---|
| Collector Emitter Breakdown Voltage | 40V | 
| Transition Frequency | 100MHz | 
| Collector Emitter Saturation Voltage | -200mV | 
| Max Breakdown Voltage | 40V | 
| Collector Base Voltage (VCBO) | 50V | 
| Emitter Base Voltage (VEBO) | 5V | 
| Continuous Collector Current | -100mA | 
| Radiation Hardening | No | 
| REACH SVHC | No SVHC | 
| RoHS Status | ROHS3 Compliant | 
| Factory Lead Time | 13 Weeks | 
| Mount | Surface Mount | 
| Mounting Type | Surface Mount | 
| Package / Case | 3-UFDFN | 
| Number of Pins | 3 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Tape & Reel (TR) | 
| Published | 2011 | 
| JESD-609 Code | e4 | 
| Pbfree Code | yes | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| ECCN Code | EAR99 | 
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | 
| Additional Feature | HIGH RELIABILITY | 
| Subcategory | Other Transistors | 
| Max Power Dissipation | 250mW | 
| Terminal Position | BOTTOM | 
| Peak Reflow Temperature (Cel) | 260 | 
| Frequency | 100MHz | 
| Time@Peak Reflow Temperature-Max (s) | 40 | 
| Base Part Number | 2DA1774 | 
| Pin Count | 3 | 
| Number of Elements | 1 | 
| Element Configuration | Single | 
| Power Dissipation | 250mW | 
| Case Connection | COLLECTOR | 
| Gain Bandwidth Product | 100MHz | 
| Polarity/Channel Type | PNP | 
| Transistor Type | PNP | 
| Collector Emitter Voltage (VCEO) | 40V | 
| Max Collector Current | 100mA | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA 6V | 
| Current - Collector Cutoff (Max) | 100nA ICBO | 
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |