1N5803
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | A, Axial |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Additional Feature | HIGH RELIABILITY |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Technology | AVALANCHE |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 1μA @ 75V |
| Voltage - Forward (Vf) (Max) @ If | 875mV @ 1A |
| Case Connection | ISOLATED |
| Forward Current | 2.5A |
| Operating Temperature - Junction | -65°C~175°C |
| Output Current-Max | 1A |
| Forward Voltage | 875mV |
| Max Reverse Voltage (DC) | 75V |
| Average Rectified Current | 1A |
| Reverse Recovery Time | 25 ns |
| Peak Reverse Current | 1μA |
| Max Repetitive Reverse Voltage (Vrrm) | 75V |
| Capacitance @ Vr, F | 25pF @ 10V 1MHz |
| Peak Non-Repetitive Surge Current | 35A |
| Radiation Hardening | Yes |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet