1N5406T-G
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | DO-201AD, Axial |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Additional Feature | HIGH RELIABILITY |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | 1N5406 |
| JESD-30 Code | O-PALF-W2 |
| Operating Temperature (Max) | 125°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 5μA @ 600V |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 3A |
| Case Connection | ISOLATED |
| Operating Temperature - Junction | -65°C~125°C |
| Output Current-Max | 3A |
| Application | GENERAL PURPOSE |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Max Reverse Voltage (DC) | 600V |
| Average Rectified Current | 3A |
| Number of Phases | 1 |
| Non-rep Pk Forward Current-Max | 200A |
| Reverse Current-Max | 5μA |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet