1N5062TAP
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Silver, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | SOD-57, Axial |
| Number of Pins | 2 |
| Supplier Device Package | SOD-57 |
| Packaging | Tape & Box (TB) |
| Published | 2012 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Capacitance | 40pF |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Avalanche |
| Current - Reverse Leakage @ Vr | 1μA @ 800V |
| Voltage - Forward (Vf) (Max) @ If | 1.15V @ 2.5A |
| Operating Temperature - Junction | -55°C~175°C |
| Max Surge Current | 50A |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Current - Average Rectified (Io) | 2A |
| Forward Voltage | 1.15V |
| Max Reverse Voltage (DC) | 800V |
| Average Rectified Current | 2A |
| Reverse Recovery Time | 4 μs |
| Peak Reverse Current | 1μA |
| Max Repetitive Reverse Voltage (Vrrm) | 800V |
| Capacitance @ Vr, F | 40pF @ 0V 1MHz |
| Peak Non-Repetitive Surge Current | 50A |
| Reverse Voltage | 800V |
| Recovery Time | 4 μs |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet