1N4150TR
| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e2 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver (Sn/Ag) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| HTS Code | 8541.10.00.70 |
| Subcategory | Rectifier Diodes |
| Terminal Form | WIRE |
| Current Rating | 200mA |
| Base Part Number | 1N4150 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 100nA @ 50V |
| Power Dissipation | 500mW |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 200mA |
| Case Connection | ISOLATED |
| Forward Current | 150mA |
| Max Reverse Leakage Current | 100nA |
| Operating Temperature - Junction | 175°C Max |
| Max Surge Current | 4A |
| Output Current-Max | 0.15A |
| Current - Average Rectified (Io) | 300mA DC |
| Forward Voltage | 1V |
| Max Reverse Voltage (DC) | 50V |
| Average Rectified Current | 300mA |
| Reverse Recovery Time | 4 ns |
| Peak Reverse Current | 100nA |
| Max Repetitive Reverse Voltage (Vrrm) | 50V |
| Capacitance @ Vr, F | 2.5pF @ 0V 1MHz |
| Peak Non-Repetitive Surge Current | 4A |
| Max Forward Surge Current (Ifsm) | 4A |
| Recovery Time | 4 ns |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet